Versatile and clear synthetic synapses with extraordinarily low power consumption have potential to be used in brain-like neuromorphic electronics. Nonetheless, many of the clear supplies for versatile memristive synthetic synapses had been reported to point out picojoule-scale excessive power consumption with kiloohm-scale low resistance, which limits the scalability for parallel operation. Right here, we report on a versatile memristive synthetic synapse primarily based on Cs3Cu2I5 with power consumption as little as 10.48 aJ (= 10.48 × 10−18 J) μm−2 and resistance as excessive as 243 MΩ for writing pulses. Interface-type resistive switching on the Schottky junction between p-type Cu3Cs2I5 and Au is verified, the place migration of iodide vacancies and uneven provider transport owing to the efficient gap mass is thrice heavier than efficient electron mass are discovered to play crucial roles in controlling the conductance, resulting in excessive resistance. There was little distinction in synaptic weight updates with excessive linearity and 250 states earlier than and after bending the versatile machine. Furthermore, the MNIST-based recognition fee of over 90% is maintained upon bending, indicative of a promising candidate for extremely environment friendly versatile synthetic synapses.