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Infineon presents new automotive 750 V EDT2 IGBTs in a TO247PLUS package deal for discrete traction inverters

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Munich, Germany. 3 March, 2022 – Infineon Applied sciences AG is launching the brand new EDT2 IGBTs in a TO247PLUS package deal. The gadgets are optimised for automotive discrete traction inverters and develop Infineon’s portfolio of discrete high-voltage gadgets for automotive purposes. Resulting from their prime quality, the IGBTs meet and exceed the business customary AECQ101 for automotive elements.

Because of this, the gadgets can considerably enhance the efficiency and reliability of inverter methods. With the automotive micro-pattern trench-field-stop cell design, the IGBTs are primarily based on a know-how that has already been efficiently utilised in a number of inverter modules such because the EasyPACK 2B EDT2 or the HybridPACK.

As required for the goal purposes, the product household is short-circuit-robust. As well as, the TO247PLUS package deal gives a larger creepage distance for straightforward design-in. EDT2 know-how is optimised for traction inverter and has a breakdown voltage of 750 V, supporting battery voltages as much as 470 V DC, and considerably decrease switching and conduction losses.

The rated currents of the discrete EDT2 IGBTs are 120 A and 200 A at 100°C, every with a really low ahead voltage, lowering conduction losses by as much as 13% in comparison with the earlier era. With a rated present of 200 A, the AIKQ200N75CP2 can be the discrete IGBT in a TO247Plus package deal. Thus, for an outlined goal energy class, fewer gadgets are wanted in parallel. Moreover, energy density will increase and system prices lower.

As well as, the EDT2 IGBTs function a particularly slender parameter distribution. The collector-emitter saturation voltage (V ce(sat)) distinction between typical and most values is lower than 200 mV and the gate threshold voltage (V GEth) distinction is lower than 750 mV. Moreover, the thermal coefficient is optimistic. Collectively, this permits simple parallel operation and supplies system flexibility and energy scalability for closing designs. Furthermore, the IGBTs supply easy switching efficiency, low gate cost (Q G) and a excessive junction temperature (T vjop) of 175°C.

Availability

The AIKQ120N75CP2 and the AIKQ200N75CP2 at the moment are obtainable. Extra data is out there at AIKQ120N75CP2 and AIKQ200N75CP2.

Extra details about Infineon’s contribution to power effectivity click on right here.

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